| E-Beam Evapourators |
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Compact single and multi-cell E-beam evapourators for thin film MBE growth applications. The EBV 40A1 electron beam evapourator is designed for ultra-pure sub-monolayer and multilayer thin film growth by molecular beam epitaxy. Precisely controlled and monitored evapouration delivers deposition rates from as low as 1/10 monolayer per minute with full PID controlled flux regulation. Multi-channel water-cooling ensures ultra-low background pressure (typically in the 10-10 mbar range) during evapouration enabling growth of ultra-pure layers. The precisely defined evaporant beam means highly uniform deposition on the sample, the deposition area being determined by the distance from the source to the sample and the choice of one of the easily exchangeable exit apertures. The instrument is configured with choice of manual or automatic shutter.Additional information • Electron Evapourator mounts via DN 40CF flange, fully UHV-compatible, W/Th-filament for evaporation of rod material or from small conductable crucibles • Power delivery of 50 W for high vapor pressure materials and up to 200 W for crucibles and thick wires • Evaporation of W, Ta, Mo, C, Pt, Cr, Ti, Fe, etc. from wire and Ag, Au, Al, Ni, etc. from crucibles or wetted wire cages • Deposition rate ca. 2 nm/min. for high temperature materials and 15-20 nm/min for high vapor pressure materials at 100 mm working distance • Wire feed 25 mm • Excellent water cooling by multiple water channels • Knudsen cell type crucible made from stainless steel • Full software control • Flux regulation via ion current incl. electrode, feedthrough, display unit and PID-regulator • Integrated manual or electro-pneumatic shutter • Rear-loading evaporant • Choice of exit nozzle apertures • Electron Beam Evaporator Power Supply EBV40APS • Linear Shift (optional) You can download the data sheet here;
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