Ion Gun for Depth Profiling

Ion Gun for Depth Profiling IS40E1

The IS 40E1 ion gun for depth profiling applications is a two lens, extractor type, focused, differentially pumped source. The ion gun is able to raster a 10 mm x 10 mm area of the surface at the recommended working distance.

It is particularly suitable for depth profiling in XPS, ISS and SIMS. The ion gun can be also used for sample surface cleaning.

Ion Gun Power Supply

The IS40-PS power supply drives the IS40E1 ion gun whose primary use is for depth profiling in AES/XPS and SIMS applications.

The IS40-PS power supply allows fine adjustment of the primary beam energy and ion density and of beam profile via adjustment of extractor, focus lens, deflection and positioning elements. The current status of each parameter is displayed on the large front panel LCD display. All settings can be stored and recalled automatically after unit switch on, or else manually adjusted. The unit also features a built in timer and automatic standby mode.

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Features

Specially configured nose cone
Operation with inert (Ar) & reactive gases (O₂, H₂, hydrocarbons with reduced lifetime)
Continuously variable spot size
Extremely homogeneous crater/beam profile
Field replaceable filament
UHV gas inlet
UHV conditions maintained in chamber
Integrated scan and deflection unit

Options

Wien mass filter
Gas dosing system
Linear shift: 25, 50, 75, 100 mm
Differential pumping (2 stages)

Technical Data

Ion Gun for Depth Profiling IS40 E1
Mounting flange	DN 40CF (rotatable)
Gases	Ar and reactive gases (O₂, H₂ hydrocarbons with reduced lifetime)
Energy range	0.15 keV - 5 keV
Scan area	10 mm x 10 mm (for working distance of 23 mm)
Current density	up to 4 mA / cm² (for distance 23 mm)
Beam current	> 1 μA (for distance 23 mm)
Cathode type	yttrium oxide coated iridium filament
Cone angle	Small, 50°
Insertion length	163 mm (standard)
FWHM	dependent on working distance (< 150 μm for distance 23 mm)
Typical working distance	23 - 120 mm
Bakeout temperature	250 °C
Working pressure	10^-8 mbar (with max beam current)

Specification (IS40 E1 Power Supply)
Beam energy (E)	0 keV - 5 keV, resolution 0.01 keV, ripple < 0.2 V_pp
Emission current (I_e)	0.01 mA - 10 mA, resolution 0.01 mA
Focus (1,2) voltage	0 - 5000 V, resolution 1 V, ripple < 0.2 V_pp
Extractor voltage (Ex)	60 - 100% of energy, resolution 0.1%, ripple < 0.2 V_pp
Beam position (Px, Py)	-5 mm to 5 mm, resolution 0.01 mm
Scanning area (Δx, Δy)	10 mm x 10 mm, resolution 0.01 mm
Scanning speed (time/dot)	20 μs - 30 ms
Weight (approx.)	12 kg

Beam energy (E)

	0 keV - 5 keV, resolution 0.01 keV, ripple < 0.2 V_pp
Emission current (I_e)	0.01 mA - 10 mA, resolution 0.01 mA
Focus (1,2) voltage	0 - 5000 V, resolution 1 V, ripple < 0.2 V_pp
Extractor voltage (Ex)	60 - 100% of energy, resolution 0.1%, ripple < 0.2 V_pp
Beam position (Px, Py)	-5 mm to 5 mm, resolution 0.01 mm
Scanning area (Δx, Δy)	10 mm x 10 mm, resolution 0.01 mm
Scanning speed (time/dot)	20 μs - 30 ms
Weight (approx.)	12 kg

Ion Gun for Depth Profiling